2017 · Computer Physics Communications 221, 282–289
Kinetic Monte Carlo simulation of single-electron multiple-trapping transport in disordered media
In brief
A simulation method for electron transport in disordered semiconductors that stays accurate even when disorder is strong.
Key results- Uses the full density of localized states instead of a truncated one.
- Adds an occupation index to account for filled trap sites.
- Validated across a broad range of disorder, Fermi level and temperature.
M. Javadi, Y. Abdi, "Kinetic Monte Carlo simulation of single-electron multiple-trapping transport in disordered media," Computer Physics Communications 221, 282–289 (2017). https://doi.org/10.1016/j.cpc.2017.09.002
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