2020 · arXiv preprint
Graphene–semiconductor contact
In brief
A systematic treatment of graphene–semiconductor junctions. Because graphene has a finite density of states at the Fermi level, its internal potential breaks the Schottky–Mott limit and the barrier-height sum rule, so the junction behaves as a semimetal–semiconductor contact with features of both metal–semiconductor and semiconductor–semiconductor junctions.
Key results- Generalized interface equations that link junction properties to the carrier density in graphene.
- The tunable barrier height is tied to junction capacitance, with the image-force effect included.
- Experimental methods for measuring built-in potential, barrier height and capacitance.
- Analysis of experimental data reveals a strong inversion layer at graphene–silicon interfaces.
M. Javadi, "Graphene–semiconductor contact," arXiv preprint (2020). arXiv:2004.12313
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