2020 · Physical Review Applied 14, 064048

Kinetics of charge carriers across a graphene–silicon Schottky junction

M. Javadi, A. Noroozi, Y. Abdi
In brief

How fast can charge cross from a 2D sheet into a 3D crystal? Comparing graphene–silicon and gold–silicon contacts, we found that carriers cross the graphene interface about a million times more slowly, limited by how slowly electrons in graphene move out of its plane.

Key results
  • Carrier transfer velocity across Au–Si is about 10⁷ cm/s, matching the thermal velocity in silicon.
  • Across graphene–Si it is about 10 cm/s, nearly six orders of magnitude smaller.
  • The effective out-of-plane velocity of carriers in graphene is about 1 cm/s.
  • Transfer velocity rises almost exponentially with Schottky barrier height, explained by T¹ scaling theory with barrier-dependent scattering.
Cite
M. Javadi, A. Noroozi, Y. Abdi, "Kinetics of charge carriers across a graphene–silicon Schottky junction," Physical Review Applied 14, 064048 (2020). https://doi.org/10.1103/PhysRevApplied.14.064048
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