2020 · Physical Review Applied 14, 064048
Kinetics of charge carriers across a graphene–silicon Schottky junction
In brief
How fast can charge cross from a 2D sheet into a 3D crystal? Comparing graphene–silicon and gold–silicon contacts, we found that carriers cross the graphene interface about a million times more slowly, limited by how slowly electrons in graphene move out of its plane.
Key results- Carrier transfer velocity across Au–Si is about 10⁷ cm/s, matching the thermal velocity in silicon.
- Across graphene–Si it is about 10 cm/s, nearly six orders of magnitude smaller.
- The effective out-of-plane velocity of carriers in graphene is about 1 cm/s.
- Transfer velocity rises almost exponentially with Schottky barrier height, explained by T¹ scaling theory with barrier-dependent scattering.
M. Javadi, A. Noroozi, Y. Abdi, "Kinetics of charge carriers across a graphene–silicon Schottky junction," Physical Review Applied 14, 064048 (2020). https://doi.org/10.1103/PhysRevApplied.14.064048
Related work
Chemical vapor deposition of two-dimensional boron sheets by thermal decomposition of diboraneACS Applied Materials & Interfaces 13 (7), 8844–8850, 2021Theoretical efficiency limit of graphene–semiconductor solar cellsApplied Physics Letters 117, 053902, 2020Graphene–semiconductor contactarXiv preprint, 2020